IGBT - Insulated Gate Bipolar Transistor |
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IGBT - switching converters
A four-layer discrete power device that combines the characteristics of a power MOS transistor and a
thyristor.
IGBT - Insulated Gate Bipolar Transistor.
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IGBT is a semiconductor device that has identical operation to a bipolar transistor, but has a field effect type gate, so that a gate-emitter voltage is applied to make it conductive, no current needs to be injected. When gate-emitter voltage is very low the device switches off. The commutations are faster than with a bipolar transistor and a little slower than with a
MOSFET. IGBTs are usually found in high-voltage circuits (above 300V).
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